13 Jul 2026

Hall Effect: Carrier Type, Hall Coefficient, and Carrier Concentration

practical pg-iv cmp semiconductor hall-effect carrier-concentration

Experimental arrangement

Hall-effect semiconductor measurement arrangement
Current flows along the semiconductor strip, the magnetic field is perpendicular to it, and the transverse Hall voltage is measured.

Aim

To determine the Hall coefficient and carrier concentration of a semiconductor sample.

Apparatus

Semiconductor Hall sample, electromagnet, constant-current source, microvoltmeter, Gauss meter, and micrometer.

Theory

An applied longitudinal electric field makes the mobile carriers in a semiconductor acquire a mean drift velocity $v_d$. If a magnetic field $B$ is applied perpendicular to this current, every carrier experiences the transverse Lorentz force $q(\mathbf v_d\times\mathbf B)$. Carriers accumulate at one side of the specimen and leave the opposite side deficient. This charge separation creates a transverse Hall field $E_H$ that grows until

\[qE_H=qv_dB.\]

For a rectangular specimen of width $w$ and thickness $t$, $E_H=V_H/w$. The current is $I=nqv_dwt$ for one dominant carrier type. Eliminating $v_d$ gives

\[V_H=\frac{IB}{nqt}.\]

The Hall coefficient is therefore

\[R_H=\frac{V_Ht}{IB},\qquad n=\frac{1}{eR_H}.\]

For electrons $q=-e$, so $R_H$ is negative; for holes it is positive. The sign of the corrected Hall voltage therefore identifies the majority carrier. A small transverse voltage may exist even at $B=0$ because the contacts are not exactly opposite. Since the true Hall voltage reverses with $I$ or $B$ while the offset does not, reversal readings are combined to remove it.

If the longitudinal conductivity $\sigma$ is also known, the mobility follows from $\mu= R_H \sigma$. The Hall angle describes the deflection of current and satisfies $\tan\theta_H=E_H/E_x=\mu B$ in the simple one-carrier model. The linearity of $V_H$ with both $I$ and $B$ is an important experimental check.

Observations

Sample thickness $t=0.50\,\text{mm}$; current $I=5\,\text{mA}$.

Magnetic field (T) Hall voltage (mV)
0.20 1.8
0.30 2.7
0.40 3.6
0.50 4.5

Graph

Hall voltage versus magnetic field graph
Hall voltage plotted against magnetic field for constant sample current.

Calculation

For $B=0.40\,\text{T}$ and $V_H=3.6\,\text{mV}$,

\[R_H=\frac{3.6\times10^{-3}\times0.50\times10^{-3}}{5\times10^{-3}\times0.40}=9.00\times10^{-4}\,\text{m}^3\text{C}^{-1}.\]

Thus

\[n=\frac{1}{eR_H}=\frac{1}{(1.602\times10^{-19})(9.00\times10^{-4})}=6.93\times10^{21}\,\text{m}^{-3}.\]

Result

\[\boxed{R_H=9.00\times10^{-4}\,\text{m}^3\text{C}^{-1}},\qquad \boxed{n=6.93\times10^{21}\,\text{m}^{-3}}.\]

Precautions

  1. Reverse the magnetic field and average the Hall readings.
  2. Keep the sample current constant.
  3. Ensure that the magnetic field is perpendicular to the current.

Viva Questions

  1. What is the Hall effect? It is the production of a transverse voltage in a current-carrying sample placed in a magnetic field.
  2. What determines the sign of Hall voltage? The sign of the dominant charge carriers.
  3. Why is a thin sample preferred? It gives a measurable Hall voltage for a given current and field.

Maxima Code

Download the PG-IV Hall-effect calculation.

© Rajesh Kumar, SKMU · Physics Lecture Notes · rajeshphy.github.io

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